THE SCIENCE OF SOUND HAS EVOLVED

WORLD'S FIRST ALL-GaN AMPLIFIED PROCESSOR

Amplifier designers today can choose from a wide range of circuit technologies for driving signals to loudspeakers. Beginning in the 1960s and continuing for nearly five decades, silicon has been the technological backbone of the semiconductor world, and for all practical purposes has been pushed to its theoretical limits.

THIS IS WHERE GaN TAKES THE STAGE

GaN’s ultra-fast precision switching accuracy and greater power handling density enable the power supply to optimize voltage distribution, delivering maximum output exclusively to high-demand channels while adaptively modulating power across remaining channels to maintain efficiency and performance stability.

THE NEW BENCHMARK

Gallium nitride (GaN) is a cutting-edge semiconductor material made from a binary compound of gallium and nitrogen.

It is produced using a technique called metal-organic chemical vapor deposition (MOCVD), where these elements bond to create a crystal structure with distinctive energy band properties.

Gallium nitride (GaN) is a cutting-edge semiconductor material made from a binary compound of gallium and nitrogen.

It is produced using a technique called metal-organic chemical vapor deposition (MOCVD), where these elements bond to create a crystal structure with distinctive energy band properties.

Although this is a simplified view of semiconductor design, a substrate is formed from two compounds selected for their differing energy band structures.

Each compound has an energy band with a distinct boundary, and the empty region that separates these boundaries is known as the bandgap. Electrons move across this empty void, transitioning between bands, enabling energy transfer.

Although this is a simplified view of semiconductor design, a substrate is formed from two compounds selected for their differing energy band structures.

BANDGAP

wider than silicon

One of the key advantages of gallium nitride over silicon lies in its wide bandgap, which imparts unique electrical properties that make it ideal for higher power applications with superior reliability.

GaN’s bandgap is more than three times wider than silicon, allowing output devices like GaN Field-Effect Transistor (FET) technology to be far more capable of supporting high-voltage circuit designs before breakdown than silicon.

The wider bandgap for gallium nitride enables greater voltage transfer at higher temperatures. These qualities are critical for reducing amplifier size, improving thermal efficiency, and enhancing overall performance compared to conventional silicon MOSFETs.